Search results for "Contact resistance"
showing 10 items of 15 documents
Impact of cyclic mechanical stress on the electrical contact resistance between gas diffusion layer and bipolar plates in Polymer Electrolyte Membran…
2018
WHEC 2018, 22nd edition of the WORLD HYDROGEN ENERGY CONFERENCE, Rio de Janeiro, BRESIL, 17-/06/2018 - 22/06/2018; and collisions) and the mechanical clamping stress applied during the stack assembly. The internal stresses come from the shrinking and the swelling of the membrane caused by water content and the difference between the thermal expansion coefficients of the cell components. These mechanical stresses have an impact on the global fuel cell's performance and one of the most sensitive cell's components to this pressure is the Gas Diffusion Layer (GDL). This layer, assembled with the membrane electrode assembly, provides the reactant gases, evacuates the produced heat and …
Fabrication of a Silicide Thermoelectric Module Employing Fractional Factorial Design Principles
2021
AbstractThermoelectric modules can be used in waste heat harvesting, sensing, and cooling applications. Here, we report on the fabrication and performance of a four-leg module based on abundant silicide materials. While previously optimized Mg2Si0.3Sn0.675Bi0.025 is used as the n-type leg, we employ a fractional factorial design based on the Taguchi methods mapping out a four-dimensional parameter space among Mnx-εMoεSi1.75−δGeδ higher manganese silicide compositions for the p-type material. The module is assembled using a scalable fabrication process, using a Cu metallization layer and a Pb-based soldering paste. The maximum power output density of 53 μW cm–2 is achieved at a hot-side temp…
Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects
2007
Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Multiwall carbon-nanotube interconnects: radial effects on physical models and resistance calculations for various metal substrates
2010
Based on a model with singular attractive potential of equidistant conductive cylinders, we illustrate an approach to calculate the electron spectrum of metallic multiwall carbon nanotubes (MW CNT) with an arbitrary number of coaxial layers. We compute the number of electrically active channels, N ch , in the ideal case when all MW CNT shells are contacted to the electrodes, starting from the one-electron spectrum. The dependence of N ch on the temperature and on both the innermost and outermost shells radii allows us to discuss the potential performances of MW CNT interconnects, affecting the power dissipation of integrated circuits. Our description improves over the isolated shells model,…
Impact of contact resistance on the electrical properties of MoS
2016
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) a…
Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
2020
In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current…
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Superconducting tunneling spectroscopy on epitaxial UPd2Al3 thin films
1997
Abstract Results of superconducting tunneling spectroscopy experiments performed on two different types of thin film planar junctions of the heavy-fermion compound UPd 2 Al 3 are presented. Cross-type junctions consist of the heavy-fermion base electrode, an insulating layer of native surface oxide and a metal counter electrode (Au or Ag). The contact resistance was only weakly temperature dependent down to the superconducting transition. In the superconducting regime a strongly reduced zero bias conductivity indicated the junction being of the superconductor-insulator-normal metal type. The observed tunneling density of states is clearly due to the superconducting energy gap of UPd 2 Al 3 …